smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SC2983 features high transiton frequency: ft=100mhz(typ.) absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 160 v collector to emitter voltage v ceo 160 v emitter to base voltage v ebo 5v collector current i c 1.5 a base current i b 0.3 a total power dissipation ta = 25 1w t c =25 15 w junction temperature t j 150 storage temperature t stg -55 to +150 p c electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =160v,i e =0 1 a emitter cutoff current i ebo v eb =5v,i c =0 1 a collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 160 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v dc current gain h fe v ce =5v,i c =100ma 70 240 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =50ma 1.5 v base- emitter voltage v be v ce =5v,i c =500ma 1 v transition frequency ft v ce =10v,i c =100ma 100 mhz collector output capacitance cob v cb =10v.i e =0,f=1mhz 25 pf h fe classification marking o y hfe 70 to 140 120 to 240 sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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